Invited Presentations – Imaging Nanofunctionality

46. Atomistic characterization of electric field assisted sintering using in situ transmission electron microscopy, Sintering 2014, Dresden, Germany (August 2014)

45. In situ transmission electron microscopy characterization of thin film/substrate interfaces under externally applied stress fields, 3th International Ceramics Congress & 6th Forum on New Materials, Montecatini Terme, Italy (June 2014)

44. In situ Electron Microscopy: Characterizing Materials under Relevant Conditions, Army Science Planning and Strategy Meeting on Materials in Extreme Environments, Towson, MD (December 2013)

43. Atomistic characterization of electric field assisted sintering using in situ transmission electron microscopy, THERMEC 2013, Las Vegas, NV (December 2013)

42. In situ TEM investigations of densification mechanisms during electric field assisted sintering, Frontiers of Electron Microscopy in Materials Science (FEMMS 2013), Lorne, Victoria, Australia (September 2013)

41. In-situ TEM Investigations of Grain Boundary Formation through Electric Field Assisted Sintering, PACRIM 10 Conference on Ceramic and Glass Technology, San Diego, CA (June 2013)

40. In situ Transmission Electron Microscopy Characterization of Interfaces under Externally Applied Stress Fields, MACAN Conference, Haifa, Israel (April 2013)

39. Imaging Nanofunctionality: Defect Evolution in Advanced Materials, Case Western Reserve University, Cleveland, OH (January 2012)

38. Structural changes during the reaction of nickel thin films with (100) silicon substrates Materials Science & Technology 2011 Conference, Columbus, OH (September 2011)

37. Sintering and TEM: Characterization of Microstructures Before, During and after Densification, International Workshop on Field Assisted Sintering Technology, PennState University, College Park, PA (August 2011)

36. Wetting -Dewetting Transitions of Ultrathin Nickel Films Deposited on Silicon (100) Substrates, Microscopy & Microanalysis Annual Meeting 2011, Nashville, TN (August 2011)

35. Imaging Nanofunctionality: studying how materials behave under real-life conditions, Lawrence Livermore National Laboratory, Livermore, CA (July 2011)

34. ImagingNanofunctionality: using TEM to characterize materials “at work”, Idaho National Laboratory, Idaho Falls, ID (May 2011)

33. Atoms – “Legos” for Scientists, TEDxDavis Event, Davis, CA (April 2011) http://www.youtube.com/watch?v=v0uVl2suglg

32. Sintering and TEM: Characterization of Microstructures Before, During and after Densification, Technical University of Darmstadt, Germany, (March 2011)

31. Imaging Nanofunctionality: taking atomic resolution electron microscopy to the next level, University of Tokyo, Tokyo, Japan, (December 2010)

30. Imaging Nanofunctionality: taking atomic resolution electron microscopy to the next level, Tokyo University of Science, Tokyo, Japan (December 2010)

29. Imaging Nanofunctionality: taking atomic resolution electron microscopy to the next level, Nara Institute of Science and Technology, Nara City, Japan, presentation entitled: (November 2010)

28. Field-assisted Sintering of Nanometric Particles by In situ TEM, Materials Science and Technology Conference, Houston, TX (October ) Field-assisted Sintering of Nanometric Particles in the TEM, Materials Science and Engineering Congress, Darmstadt, Germany (August 2010)

27. New Prospects of Aberration-corrected Scanning Transmission Electron MicroscopyUniversity of Tokyo, Tokyo, Japan (December 2009)

26. New Prospects of Aberration-corrected Scanning Transmission Electron Microscopy,Tokyo University of Science, Tokyo, Japan (December 2009)

25. Prospects of Aberration-corrected Scanning Transmission Electron Microscopy of Device Structures, IBM, Almaden, CA, presentation entitled (November 2009)

24. New Prospects of Transmission Electron Microscopy, Research Center Juelich, Germany (November 2009)

23. In situ Atomic-resolution Characterization of Semiconductor Devices, International Sematech, Austin, TX (September 2009)

22. In situ Atomic-resolution Characterization of Semiconductor Devices, Texas Instruments, Dallas, TX (September 2009)

21. Advanced Electron Microscopy at UC Davis: Characterization Techniques Spanning Multiple Length, Time and Environmental Scales, UC Davis Workshop on Probing the Atomic Scale: Lessons Learned from X-ray Applications to Environmental Science (September 2009)

20. 9th Asia-Pacific Microscopy Conference, November 2-7, 2008, ICC Jeju, Jeju, Korea à declined due to time conflict

19. Three dimensional characterization of materials using aberration-corrected STEM,European Materials Research Society Spring Meeting, Strassbourg, France (2008)

18. 3D Materials Characterization using aberration-corrected STEM, International Conference on Frontiers of Electron Microscopy in Materials Sciences 2007, Sonoma, CA, USA (2007)

17. Imaging and spectroscopy of defects in semiconductors using aberration-corrected STEM, GADEST 2007, Gettering and Defect Engineering in Semiconductor Technology, Erice, Italy (2007)

16. Electron Microscopy and Multiscale Modelling (EMMM 2007), Moscow, Russia (2007)-> declined due to time conflict

15. Aberration Corrected Scanning Transmission Electron Microscopy for Silicon Technology, Electroceramic Society Fall meeting 2007, Washington, DC, USA (2007)

14. Microstructural Characterization of Activated Carbon Fibers using Aberration Corrected Electron Microscopy, Carbon 2007, Seattle, WA, USA (2007)

13. High Resolution Microscopy with Single Atom Sensitivity using Aberration-Corrected STEM, Microscopy and Microanalysis (2007), Fort Lauderdale, FL, USA (2007)

12. Local Structure Characterization in Nanomaterials using Aberration Corrected STEM Microscopy and Microanalysis (2007), Fort Lauderdale, FL, USA (2007)

11. Imaging and Spectroscopy of Defects in Semiconductors Using Aberration-Corrected STEM, International Conference of Extended Defects in Semiconductors, Halle/Saale, Germany (2006)

10. Imaging and Spectroscopy of Defects in Semiconductors Using Aberration-Corrected STEM, POLYSE Polycrystalline Semiconductors 2006, Freudenstadt, Germany (2006)

9. Imaging and Spectroscopy of Defects in Semiconductors Using Aberration-Corrected STEM, POLYSE Polycrystalline Semiconductors 2006, Freudenstadt, Germany (2006)

8. 3D Imaging with Single Atom Sensitivity using Confocal STEM, Microscopy and Microanalysis 2006, Chicago, IL, USA (2006)

7. Three dimensional characterization of interfaces using aberration-corrected STEM,Microscopy and Microanalysis 2005, Honolulu, HI, USA (2005)

6. Three dimensional characterization of semiconductor interfaces using aberration-corrected scanning transmission electron microscopy, Characterization and Metrology for ULSI Technology 2005, Richardson, TX, USA (2005)

5. Aberration corrected STEM at ORNL, Analystical Laboratory Managers Council: Advances in Aberration Corrected STEM, U Texas at Austin, Austin, TX (2005)

4. Three Dimensional Imaging of Individual Hafnium Atoms at a Si/SiO2/HfO2Dielectric Interface, 32nd Conference on Physics and Chemistry of Semiconductor Interfaces, Bozeman, MT, USA (2005)

3. Progress in the preparation of cross-sectional TEM specimens, 2nd Workshop on Aspects of Specimen Preparation for TEM, Stuttgart, Germany (2003)

2. Dedicated STEM and Applications, EF-EELS Meeting of the German Microscopy Society, Stuttgart, Germany (2002)

1. Electron Microscopic Investigations of Ni/SrTiO3 and Cr/SrTiO3 Interfaces, Annual Oxford-Stuttgart Mingle, Oxford, UK (2002)